VS-ST083S08PFN1P Vishay Semiconductors, VS-ST083S08PFN1P Datasheet - Page 6

• Manufacturer Part Number: VS-ST083S08PFN1P
• Description: SCRs 135 Amp 800 Volt 135 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST083S08PFN1P

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 2560 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 2.15 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 25

ST083SPbF Series
Vishay High Power Products
www.vishay.com
6
10 000
10 000
10 000
1000
1000
1000
100
100
100
10
10
10
10
10
10
2500
1500
3000
2500
500
1500
3000
2500
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2000
3000
2000
2000
100
100
100
1500
400
1000
1000
t
p
t
p
t
p
1000
500
500
For technical questions, contact:
1000
1000
ST083S Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
1000
ST083S Series
Sinusoidal pulse
T
ST083S Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
400
C
Snubber circuit
R
C
V
Snubber circuit
R
C
V
C
C
Snubber circuit
R
C
V
D
= 60 °C
s
s
400
D
s
s
D
= 60 °C
= 60 °C
s
s
= 22 Ω
= 0.15 µF
= 22 Ω
= 0.15 µF
= 80 % V
= 80 % V
= 22 Ω
= 0.15 µF
= 80 % V
200
100
200
200
Inverter Grade Thyristors
50 Hz
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
100
100
50 Hz
50 Hz
DRM
DRM
DRM
10 000
10 000
(Stud Version), 85 A
10 000
[e-mail]
10 000
10 000
10 000
1000
1000
1000
100
100
100
10
10
10
10
10
10
500
1500
2000
t
p
t
p
2000
500
1500
ST083S Series
Trapezoidal pulse
T
dI/dt = 50 A/µs
ST083S Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
400
C
C
2500
100
100
= 85 °C
100
2500
2000
= 85 °C
1500
2500
3000
1000
t
p
Document Number: 94334
1000
1000
1000
500
1000
1000
ST083S Series
Sinusoidal pulse
T
Snubber circuit
R
C
V
Snubber circuit
R
C
V
400
Snubber circuit
R
C
V
C
Revision: 25-Nov-09
D
s
s
400
D
s
s
D
s
s
= 85 °C
= 22 Ω
= 0.15 µF
= 80 % V
= 22 Ω
= 0.15 µF
= 80 % V
= 22 Ω
= 0.15 µF
= 80 % V
200
200
200
50 Hz
100
100
50 Hz
50 Hz
100
DRM
DRM
DRM
10 000
10 000
10 000