SSM6K22FE(TE85L,F) Toshiba, SSM6K22FE(TE85L,F) Datasheet
SSM6K22FE(TE85L,F)
Specifications of SSM6K22FE(TE85L,F)
Related parts for SSM6K22FE(TE85L,F)
SSM6K22FE(TE85L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
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Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source on-resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Note2: Pulse test Switching Time Test Circuit ...
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2.5 4.0V 2.5V 2.0 2.0V 1.5 V =1.8V GS 1.0 0.5 0.0 0.0 0.5 1.0 Drain-Source voltage V ( 500 Common Source Common Source Ta=25°C ...
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I D 100 Common Source Common Source VDS=3V V =-3V DS Pulse test Ta=25℃ 0.1 0.01 0.001 0.01 0.1 Drain current I ( 2.5 Common Source Common Source ...
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era tin g area 10 I max (Pulsed max D (Continuous) 100ms DC operation Ta=25℃ 0.1 Mounted on FR4 board (25.4 mm ・ 25.4 mm ・ 1 pad: 645 ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...