2N7000KL-TR1-E3 Vishay/Siliconix, 2N7000KL-TR1-E3 Datasheet - Page 5

• Manufacturer Part Number: 2N7000KL-TR1-E3
• Description: MOSFET 60V (DS) .47A .8W
• Manufacturer: Vishay/Siliconix

Specifications of 2N7000KL-TR1-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 70 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 200 mA
• Resistance Drain-source Rds (on): 5 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 4.8 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.4 W
• Rise Time: 4.8 ns
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 12.8 ns

Document Number: 70226
S-04279—Rev. F, 16-Jul-01
1.000
0.100
0.010
0.001
0.01
0.1
0.0
1
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
0.2
T
V
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
J
SD
= 125_C
0.01
Single Pulse
0.4
– Source-to-Drain Voltage (V)
0.6
1
0.8
T
J
= 25_C
–0.00
–0.25
–0.50
–0.75
0.50
0.25
1.0
–50
1.2
–25
_
t
1
– Square Wave Pulse Duration (sec)
1.4
10
0
Threshold Voltage
I
D
2N7000/2N7002, VQ1000J/P, BS170
25
= 250 mA
50
75
100
100
6
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
125
2
150
4
V
GS
– Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
6
P
DM
500 mA
JM
I
D
= 50 mA
– T
8
t
1
1 K
A
Vishay Siliconix
= P
t
10
2
DM
Z
12
thJA
thJA
t
t
1
2
(t)
= 156_C/W
14
www.vishay.com
16
18
10 K
11-5
20