VN0106N3-P002-G Supertex, VN0106N3-P002-G Datasheet - Page 4
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VN0106N3-P002-G
Manufacturer Part Number
VN0106N3-P002-G
Description
MOSFET 60V 3Ohm
Manufacturer
Supertex
Datasheet
1.VN0106N3-P013-G.pdf
(5 pages)
Specifications of VN0106N3-P002-G
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
350 mA
Resistance Drain-source Rds (on)
3 Ohms
Mounting Style
Through Hole
Package / Case
TO-92
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Performance Curves
100
1.1
1.0
0.9
2.5
2.0
1.5
1.0
0.5
75
50
25
Supertex inc.
0
Capacitance vs. Drain-to-Source Voltage
0
-50
0
0
BV
V
DSS
DS
Transfer Characteristics
2
= 25V
Variation with Temperature
10
0
T
A
= -55
4
V
V
DS
GS
T
j
(
(volts)
(volts)
50
O
20
O
C
C)
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
f = 1.0MHz
8
125
(cont.)
C
C
ISS
25
RSS
O
C
O
C
150
10
40
4
5.0
4.0
3.0
2.0
1.0
1.6
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
-50
0
V
0
(th)
Gate Drive Dynamic Characteristics
40 pF
On-Resistance vs. Drain Current
Tel: 408-222-8888
and R
V
0.5
0.2
GS
V
= 5.0V
(th)
0
DS
@ 1.0mA
Q
Variation with Temperature
G
(nanocoulombs)
I
1.0
0.4
D
(amperes)
T
R
j
DS
50
(
O
@ 10V, 1.0A
C)
V
R
DS
1.5
80 pF
0.6
DS
www.supertex.com
= 10V
@ 5.0V, 0.25A
100
V
2.0
0.8
GS
= 10V
40V
2.5
1.0
150
VN0106
1.9
1.6
1.3
1.0
0.7
0.4