VS-VSKH105/14 Vishay Semiconductors, VS-VSKH105/14 Datasheet - Page 3

• Manufacturer Part Number: VS-VSKH105/14
• Description: SCR Modules 1400 Volt 105 Amp 2094 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH105/14

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 235 A
• Non Repetitive On-state Current: 2000 A
• Breakover Current Ibo Max: 2094 A
• Rated Repetitive Off-state Voltage Vdrm: 1.4 kV
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• On-state Voltage: 1.8 V
• Holding Current (ih Max): 250 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 105 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

Note
• Table shows the increment of thermal resistance R
Document Number: 94628
Revision: 17-May-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
Maximum RMS insulation voltage
Maximum critical rate of rise of off-state voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating temperature range
Storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.105..
180°
0.04
RRM
, V
DRM
SINE HALF WAVE CONDUCTION
[e-mail], [e-mail],
Thyristor/Diode and Thyristor/Thyristor, 105 A
ADD-A-PAK Generation VII Power Modules
For technical questions within your region, please contact one of the following:
VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
0.048
120°
to heatsink
busbar
0.063
90°
SYMBOL
SYMBOL
SYMBOL
P
- V
dV/dt
R
R
I
0.085
thJC
I
V
T
P
V
RRM,
I
V
DRM
I
G(AV)
I
T
thJC
thCS
60°
GM
GT
GD
INS
Stg
GM
GD
GT
J
GM
when devices operate at different conduction angles than DC
JEDEC
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound.
T
T
T
T
T
T
T
T
T
50 Hz
T
0.125
J
J
J
J
J
J
J
J
J
J
30°
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= 125 °C, rated V
= 125 °C, rated V
= 130 °C, gate open circuit
= 130 °C, linear to 0.67 V
0.033
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
180°
RECTANGULAR WAVE CONDUCTION
DRM
DRM
[e-mail]
0.052
applied
applied
120°
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
DRM
0.067
Vishay Semiconductors
90°
0.088
60°
3000 (1 min)
- 40 to 130
3600 (1 s)
VALUES
VALUES
VALUES
TO-240AA compatible
1000
0.22
0.25
270
150
0.1
2.7
4.0
2.5
1.7
75
12
10
80
20
4
3
3
3
6
0.127
30°
www.vishay.com
UNITS
UNITS
UNITS
°C/W
V/μs
Nm
mA
mA
mA
oz.
°C
W
UNITS
A
V
V
V
g
°C/W
3