VS-10TTS08STRLPBF Vishay Semiconductors, VS-10TTS08STRLPBF Datasheet - Page 2

• Manufacturer Part Number: VS-10TTS08STRLPBF
• Description: SCRs 800 Volt 140 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-10TTS08STRLPBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 140 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.05 mA
• Forward Voltage Drop: 1.15 V
• Gate Trigger Voltage (vgt): 1 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 15 mA
• Holding Current (ih Max): 30 mA
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 800

VS-10TTS08SPbF High Voltage Series
Vishay Semiconductors
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Typical holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
2
2
t for fusing
√t for fusing
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SYMBOL
SYMBOL
SYMBOL
I
I
RM
P
V
dV/dt
-V
T(RMS)
+I
I
dI/dt
P
I
V
V
V
Phase Control SCR, 10 A
T(AV)
I
G(AV)
I
I
TSM
T(TO)
I
2
GD
I
GT
I
GM
t
2
TM
r
GM
GT
GD
t
/I
GM
t
√t
H
L
gt
t
rr
q
t
DM
Surface Mountable
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
t = 0.1 ms to 10 ms, no voltage reapplied, T
6.5 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
Anode supply = 6 V, resistive load
T
J
C
J
J
J
J
T
T
= 125 °C, V
= 125 °C
= 25 °C
= 125 °C
= 25 °C
J
J
= 112 °C, 180° conduction half sine wave
= 25 °C
= 125 °C
J
= 25 °C
DRM
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= Rated value
[e-mail]
RRM
RRM
V
R
applied, T
applied, T
= Rated V
J
J
J
J
J
J
= - 65 °C
= 25 °C
= 125 °C
= - 65 °C
= 25 °C
= 125 °C
J
J
= 125 °C
J
= 125 °C
J
RRM
T
= 125 °C
= 125 °C
J
= 1 A
= 125 °C
/V
DRM
Document Number: 94562
VALUES
VALUES
VALUES
1000
1.15
17.3
0.85
0.05
100
120
140
100
150
100
0.8
6.5
1.0
8.0
2.0
1.5
1.2
0.7
0.2
0.1
10
72
30
50
10
20
15
10
Revision: 08-Jun-10
1
3
UNITS
UNITS
UNITS
A
V/μs
A/μs
A
mΩ
mA
mA
mA
μs
2
W
A
V
V
A
V
V
2
√s
s