AT28HC64BF-12SU Atmel, AT28HC64BF-12SU Datasheet - Page 3

IC EEPROM 64KBIT 120NS 28SOIC

AT28HC64BF-12SU

Manufacturer Part Number
AT28HC64BF-12SU
Description
IC EEPROM 64KBIT 120NS 28SOIC
Manufacturer
Atmel

Specifications of AT28HC64BF-12SU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
64K (8K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
28-SOIC (7.5mm Width)
Density
64Kb
Interface Type
Parallel
Organization
8Kx8
Access Time (max)
120ns
Write Protection
Yes
Data Retention
10Year
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Supply Current
40mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
28
Access Time
120 ns
Output Enable Access Time
50 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
40 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
5 V
Capacitance, Input
4 pF
Capacitance, Output
8 pF
Current, Input, Leakage
10 μA
Current, Operating
40 mA
Current, Output, Leakage
10
Package Type
SOIC
Power Dissipation
200 mW
Temperature, Operating
-40 to +85 °C
Time, Access
120 ns
Time, Address Hold
50
Voltage, Input, High
2 V
Voltage, Input, Low
0.8 V
Voltage, Output, High
2.4 V
Voltage, Output, Low
0.4 V
Voltage, Supply
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28HC64BF-12SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
3. Block Diagram
4. Device Operation
4.1
4.2
4.3
4.4
0274L–PEEPR–2/3/09
Read
Byte Write
Page Write
DATA Polling
The AT28HC64B is accessed like a Static RAM. When CE and OE are low and WE is high,
the data stored at the memory location determined by the address pins is asserted on the out-
puts. The outputs are put in the high-impedance state when either CE or OE is high. This dual
line control gives designers flexibility in preventing bus contention in their systems.
A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a
write cycle. The address is latched on the falling edge of CE or WE, whichever occurs last.
The data is latched by the first rising edge of CE or WE. Once a byte write has been started, it
will automatically time itself to completion. Once a programming operation has been initiated
and for the duration of t
The page write operation of the AT28HC64B allows 1 to 64 bytes of data to be written into the
device during a single internal programming period. A page write operation is initiated in the
same manner as a byte write; after the first byte is written, it can then be followed by 1 to 63
additional bytes. Each successive byte must be loaded within 150 µs (t
byte. If the t
the internal programming operation. All bytes during a page write operation must reside on the
same page as defined by the state of the A6 to A12 inputs. For each WE high-to-low transition
during the page write operation, A6 to A12 must be the same.
The A0 to A5 inputs specify which bytes within the page are to be written. The bytes may be
loaded in any order and may be altered within the same load period. Only bytes which are
specified for writing will be written; unnecessary cycling of other bytes within the page does
not occur.
The AT28HC64B features DATA Polling to indicate the end of a write cycle. During a byte or
page write cycle, an attempted read of the last byte written will result in the complement of the
written data to be presented on I/O7. Once the write cycle has been completed, true data is
valid on all outputs, and the next write cycle may begin. DATA Polling may begin at any time
during the write cycle.
BLC
limit is exceeded, the AT28HC64B will cease accepting data and commence
ADDRESS
INPUTS
GND
VCC
WE
OE
CE
WC
, a read operation will effectively be a polling operation.
OE, CE and WE
X DECODER
Y DECODER
LOGIC
DATA INPUTS/OUTPUTS
INPUT/OUTPUT
IDENTIFICATION
CELL MATRIX
DATA LATCH
I/O0 - I/O7
BUFFERS
Y-GATING
BLC
) of the previous
3

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