VS-ST1200C20K0L Vishay Semiconductors, VS-ST1200C20K0L Datasheet - Page 3

• Manufacturer Part Number: VS-ST1200C20K0L
• Description: SCR Modules 1650 Amp 2000 Volt 3080 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST1200C20K0L

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 3080 A
• Non Repetitive On-state Current: 30500 A
• Breakover Current Ibo Max: 32000 A
• Rated Repetitive Off-state Voltage Vdrm: 2 kV
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• On-state Voltage: 1.73 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: A-24 (K-PUK)
• Circuit Type: SCR
• Current Rating: 1650 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

Note
• The table above shows the increment of thermal resistance R
Document Number: 94394
Revision: 23-Apr-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.003
0.004
0.005
0.007
0.012
For technical questions, contact:
SYMBOL
SYMBOL
R
R
+ V
P
- V
P
V
T
V
thC-hs
I
thJ-hs
G(AV)
I
I
GM
T
Phase Control Thyristors
GD
GT
GM
Stg
DOUBLE SIDE
GT
GD
GM
J
GM
(Stud Version), 1650 A
0.003
0.004
0.005
0.007
0.012
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
thJC
J
J
J
J
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
when devices operate at different conduction angles than DC
SINGLE SIDE
RECTANGULAR CONDUCTION
TEST CONDITIONS
TEST CONDITIONS
0.002
0.004
0.005
0.007
0.012
[e-mail]
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
Vishay High Power Products
0.002
0.004
0.005
0.007
0.012
DRM
ST1200C..KP Series
anode to
TEST CONDITIONS
T
J
= T
- 40 to 125
- 40 to 150
TYP.
VALUES
200
100
1.4
1.1
0.9
50
24 500
0.0.42
(2500)
0.021
0.006
0.003
J
VALUES
425
maximum
0.25
A-24 (K-PUK)
3.0
5.0
16
20
10
3
MAX.
200
www.vishay.com
3.0
-
-
-
-
UNITS
K/W
(kg)
°C
UNITS
UNITS
N
g
K/W
mA
mA
W
A
V
V
V
3