VS-181RKI40PBF Vishay Semiconductors, VS-181RKI40PBF Datasheet - Page 3

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VS-181RKI40PBF

Manufacturer Part Number
VS-181RKI40PBF
Description
SCRs 180 Amp 400 Volt 285 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-181RKI40PBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
4000 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
Forward Voltage Drop
1.35 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
150 mA
Holding Current (ih Max)
600 mA
Mounting Style
Stud
Package / Case
TO-93
Factory Pack Quantity
12
Note
• The table above shows the increment of thermal resistance R
Document Number: 94382
Revision: 03-Nov-09
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
For technical questions, contact:
SYMBOL
SYMBOL
+ V
P
- V
R
R
P
V
T
V
I
G(AV)
I
I
0.050
0.063
0.080
0.118
0.225
GM
T
thJC
thCS
GD
GT
Stg
GM
GD
GT
GM
J
GM
Phase Control Thyristors
(Stud Version), 180 A
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= T
J
J
J
J
thJC
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
when devices operate at different conduction angles than DC
180RKI...PbF, 181RKI...PbF Series
RECTANGULAR CONDUCTION
TEST CONDITIONS
indmodules@vishay.com
TEST CONDITIONS
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
applied
≤ 5 ms
≤ 5 ms
DRM
0.032
0.059
0.082
0.124
0.228
anode to cathode
Vishay High Power Products
TEST CONDITIONS
T
J
= T
J
TYP.
130
- 40 to 125
- 40 to 150
2.0
1.2
0.9
maximum
65
35
VALUES
VALUES
TO-209AB (TO-93)
(275)
(210)
0.15
0.04
24.5
0.25
280
2.0
3.0
5.0
31
10
20
10
MAX.
www.vishay.com
150
2.5
-
-
-
-
(lbf · in)
UNITS
UNITS
UNITS
N · m
K/W
K/W
mA
mA
°C
W
A
V
V
V
g
3

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