VS-VSKT26/04 Vishay Semiconductors, VS-VSKT26/04 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/698/vishay_semiconductors_sml.jpg)
VS-VSKT26/04
Manufacturer Part Number
VS-VSKT26/04
Description
SCR Modules 400 Volt 27 Amp 420 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-VSKT2616.pdf
(9 pages)
Specifications of VS-VSKT26/04
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
60 A
Non Repetitive On-state Current
400 A
Breakover Current Ibo Max
420 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
15 mA
On-state Voltage
1.65 V
Holding Current (ih Max)
200 mA
Gate Trigger Voltage (vgt)
2.5 V
Gate Trigger Current (igt)
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
ADD-A-PAK
Circuit Type
Thyristors / Thyristors
Current Rating
27 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
10
Note
• Table shows the increment of thermal resistance R
Document Number: 94629
Revision: 17-May-10
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
Maximum gate voltage required to trigger
Maximum gate current required to trigger
Maximum gate voltage that will not trigger
Maximum gate current that will not trigger
BLOCKING
PARAMETER
Maximum peak reverse and off-state
leakage current at V
Maximum RMS insulation voltage
Maximum critical rate of rise of off-state voltage
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction operating and storage
temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.26..
0.212
180°
RRM
, V
DRM
SINE HALF WAVE CONDUCTION
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Thyristor/Diode and Thyristor/Thyristor, 27 A
ADD-A-PAK Generation VII Power Modules
For technical questions within your region, please contact one of the following:
0.258
120°
to heatsink
VSKT26.., VSKH26.., VSKL26.., VSKN26.. Series
busbar
0.330
90°
SYMBOL
SYMBOL
SYMBOL
T
R
P
- V
dV/dt
R
J
0.466
thJC
I
I
V
P
V
V
RRM,
, T
I
DRM
I
thCS
60°
G(AV)
I
thJC
GM
GT
GD
INS
GM
GD
GT
GM
Stg
when devices operate at different conduction angles than DC
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
JEDEC
T
50 Hz
T
T
T
T
T
T
T
T
T
J
J
0.72
J
J
J
J
J
J
J
J
30°
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
= 125 °C, rated V
= 125 °C, rated V
= 125 °C, gate open circuit
= 125 °C, linear to 0.67 V
0.166
180°
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
RECTANGULAR WAVE CONDUCTION
DRM
DRM
DiodesEurope@vishay.com
0.276
120°
applied
applied
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
DRM
0.357
Vishay Semiconductors
90°
0.482
60°
3000 (1 min)
- 40 to 125
3600 (1 s)
VALUES
VALUES
VALUES
TO-240AA compatible
1000
0.76
0.25
270
150
0.1
2.7
2.5
2.5
4.0
2.5
1.7
75
10
10
80
15
4
3
6
0.726
30°
www.vishay.com
UNITS
UNITS
UNITS
°C/W
V/μs
mA
Nm
mA
mA
oz.
°C
UNITS
W
A
V
g
V
V
°C/W
3