VS-ST1280C06K1 Vishay Semiconductors, VS-ST1280C06K1 Datasheet - Page 2

• Manufacturer Part Number: VS-ST1280C06K1
• Description: SCR Modules 2310 Amp 600 Volt 4150 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST1280C06K1

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 4150 A
• Non Repetitive On-state Current: 42500 A
• Breakover Current Ibo Max: 44500 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 100 mA
• On-state Voltage: 1.44 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: A-24 (K-PUK)
• Circuit Type: SCR
• Current Rating: 2310 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

ST1280C..K Series
Vishay High Power Products
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
Typical turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
2
2
t for fusing
√t for fusing
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
V
V
I
T(RMS)
dV/dt
I
I
dI/dt
I
I
T(TO)1
T(TO)2
V
RRM
T(AV)
DRM
TSM
Phase Control Thyristors
I
I
r
r
t
t
I
I
2
2
TM
t1
t2
H
d
q
L
(Hockey PUK Version),
t
√t
,
Gate drive 20 V, 20 Ω, t
T
Gate current 1 A, dI
V
I
V
T
T
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
T
TM
pk
J
J
d
R
J
J
2310 A
= T
= 0.67 % V
= T
= T
= 25 °C, anode supply 12 V resistive load
= 8000 A, T
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, t
= 550 A, T
J
J
J
maximum linear to 80 % rated V
maximum, anode voltage ≤ 80 % V
maximum, rated V
T(AV)
T(AV)
), T
), T
DRM
J
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
T(AV)
T(AV)
J
= T
J
J
= T
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= T
= T
, T
J
< I < π x I
< I < π x I
g
J
J
maximum, dI/dt = 40 A/µs,
/dt = 1 A/µs
J
J
maximum, t
= 25 °C
maximum
maximum
RRM
RRM
r
≤ 1 µs
DRM
T(AV)
T(AV)
Sinusoidal half wave,
initial T
/V
RRM
p
), T
), T
= 10 ms sine pulse
applied
J
J
J
= T
= T
= T
DRM
J
J
J
DRM
maximum
maximum
maximum
p
= 500 µs
Document Number: 93718
2310 (885)
VALUES
VALUES
VALUES
Revision: 11-Aug-08
55 (85)
42 500
44 500
35 700
37 400
90 270
0.077
0.068
4150
9027
8241
6383
5828
1000
1000
0.83
0.90
1.44
600
200
500
100
1.9
UNITS
UNITS
kA
UNITS
kA
A/µs
V/µs
mΩ
mA
°C
mA
µs
A
A
V
V
2
2
√s
s