VS-40TPS12APBF Vishay Semiconductors, VS-40TPS12APBF Datasheet - Page 4

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VS-40TPS12APBF

Manufacturer Part Number
VS-40TPS12APBF
Description
SCRs 1200 Volt 35 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-40TPS12APBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
600 A
Rated Repetitive Off-state Voltage Vdrm
1200 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.85 V
Gate Trigger Voltage (vgt)
2.5 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
40 mA
Holding Current (ih Max)
150 mA
Mounting Style
Through Hole
Package / Case
TO-247AC

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Revision: 10-Nov-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Number Of Equal Amplitude Half Cycle Current Puls es (N)
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
550
500
450
400
350
300
250
Fig. 5 - Maximum Non-Repetitive Surge Current
1
At Any Ra ted Load Condition And With
40T PS .. S eries
Rated V
www.vishay.com
100
R R M
0.1
10
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
1
App lied Following S urge.
a)Recommended load line for
Rectangular gate pulse
b)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
10
VGD
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initia l T = 125°C
IGD
0.01
VS-40TPS...PbF Series, VS-40TPS...-M3 Series
J
100
10
1
Fig. 7 - On-State Voltage Drop Characteristics
0.5
100
Instantaneous On-state Voltag e (V)
0.1
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
40TPS..A Series
(b)
1
(a)
1
4
40T PS .. S eries
T = 25°C
T = 125°C
1.5
J
J
Frequency Limited by PG(AV)
600
550
500
450
400
350
300
250
10
Fig. 6 - Maximum Non-Repetitive Surge Current
0.01
(1) PGM = 100 W, tp = 500µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
www.vishay.com/doc?91000
40T PS .. S eries
(4)
2
Maximum Non Rep etitive S urge Current
Of Conduction May Not Be Maintained.
Versus Pulse T rain Duration. Control
(3)
Pulse T ra in Duration (s)
100
Vishay Semiconductors
(2)
No Voltage Reapp lied
Rated V
DiodesEurope@vishay.com
(1)
0.1
1000
Initial T = 125°C
R R M
Document Number: 94388
Reapp lied
J
1

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