VS-VSKTF200-08HKP Vishay Semiconductors, VS-VSKTF200-08HKP Datasheet - Page 6

• Manufacturer Part Number: VS-VSKTF200-08HKP
• Description: SCR Modules 200 Amp 800 Volt 444 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKTF200-08HKP

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 444 A
• Non Repetitive On-state Current: 7600 A
• Breakover Current Ibo Max: 8000 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• On-state Voltage: 1.73 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 200 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: MAGN-A-PAK
• Circuit Type: Thyristors / Thyristors
• Current Rating: 200 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 2

VSK.F200..P Series
Vishay Semiconductors
www.vishay.com
6
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
tp
tp
tp
5000
VSK.F200.. S eries
T rapezoid a l pulse
T = 85°C d i/d t 50A/ µs
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 50A/ µs
5000
C
C
5000
VSK.F200.. S eries
S inusoidal pulse
T = 85°C
2500
C
1E 2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
[e-mail], [e-mail],
2500
2500
1000
For technical questions within your region, please contact one of the following:
1000
1000
400
400
400
150
1E3
1E 3
Fast Thyristor/Diode and Thyristor/Thyristor
1E3
150
150
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nub ber c irc uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
(MAGN-A-PAK Power Modules), 200 A
s
s
D
s
s
D
s
s
D
50 Hz
50 Hz
Fig. 11 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 13 - Frequency Characteristics
DRM
DRM
DRM
1E 4
1E 4
1E4
1E 4
1E4
1E4
1E1
E1
E1
1E1
1E1
1E1
[e-mail]
tp
tp
tp
VSK.F200.. S eries
S inusoidal pulse
T = 60°C
5000
VSK.F200.. S eries
T rapezoidal pulse
T = 60°C di/ dt 100A/ µs
VSK.F200.. Series
T rapezoidal pulse
T = 85°C di/ dt 100A/ µs
C
C
5000
5000
C
2500
1E2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
2500
2500
1000
1000
1000
400
400
400
Document Number: 94422
150
1E3
1E3
150
1E3
150
S nubber circuit
R = 10 ohms
C = 0.47 µF
V = 80% V
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
s
s
D
50 Hz
S nubber circ uit
R = 10 ohms
C = 0.47 µF
V = 80% V
50 Hz
s
s
D
50 Hz
s
s
D
Revision: 19-Jul-10
DRM
DRM
DRM
1E4
1E4
1E4