IRFR24N15DTRRP International Rectifier, IRFR24N15DTRRP Datasheet - Page 7

• Manufacturer Part Number: IRFR24N15DTRRP
• Description: MOSFET MOSFET, 150V, 24A, 95 mOhm, 30 nC Qg, D-Pak
• Manufacturer: International Rectifier

Specifications of IRFR24N15DTRRP

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Resistance Drain-source Rds (on): 95 mOhms
• Configuration: Single
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 140 W
• Typical Turn-off Delay Time: 19 ns

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
IRFR24N15D/IRFU24N15D
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
®
D =
-
Power MOSFETs
G
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7