AT45DB011D-MH-Y Atmel, AT45DB011D-MH-Y Datasheet - Page 46
![IC FLASH 1MBIT 66MHZ 8UDFN](/photos/7/26/72650/8-udfn-8ma1_sml.jpg)
AT45DB011D-MH-Y
Manufacturer Part Number
AT45DB011D-MH-Y
Description
IC FLASH 1MBIT 66MHZ 8UDFN
Manufacturer
Atmel
Datasheet
1.AT45DB011D-SSH-T.pdf
(52 pages)
Specifications of AT45DB011D-MH-Y
Format - Memory
FLASH
Memory Type
DataFLASH
Memory Size
1M (512 pages x 264 bytes)
Speed
66MHz
Interface
SPI, RapidS
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-UDFN
Data Bus Width
8 bit
Architecture
Sectored
Interface Type
SPI Serial
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Maximum Operating Current
25 mA
Mounting Style
SMD/SMT
Organization
32 KB x 4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 25-2. Algorithm for Randomly Modifying Data
Notes:
46
1. To preserve data integrity, each page of a DataFlash sector must be updated/rewritten at least once within every 10,000
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
AT45DB011D
cumulative page erase and program operations.
must use the address specified by the Page Address Pointer.
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Atmel’s Serial DataFlash”) for more details.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H)
AUTO PAGE REWRITE
TO BUFFER TRANSFER
ADDRESS POINTER
MAIN MEMORY PAGE
INCREMENT PAGE
START
(53H)
(58H)
END
provide address of
page to modify
MEMORY PAGE PROGRAM
(2)
(2)
BUFFER TO MAIN
BUFFER WRITE
(84H)
(83H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
3639H–DFLASH–04/09