MCH6336-S-TL-E ON Semiconductor, MCH6336-S-TL-E Datasheet - Page 4
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MCH6336-S-TL-E
Manufacturer Part Number
MCH6336-S-TL-E
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet
1.MCH6336-P-TL-E.pdf
(7 pages)
Specifications of MCH6336-S-TL-E
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Continuous Drain Current
- 5 A
Resistance Drain-source Rds (on)
43 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-3
Power Dissipation
1.5 W
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
V DS = --6V
I D = --5A
20
1
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
2
When mounted on ceramic substrate
(1200mm
60
V GS -- Qg
P D -- Ta
3
80
2
✕0.8mm)
4
100
5
120
140
6
IT12995
IT12997
160
MCH6336
7
--0.01
--1.0
--0.1
--10
--0.01
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25° C
Single pulse
When mounted on ceramic substrate (1200mm
2 3
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this area
is limited by R DS (on).
--0.1
2 3
A S O
5 7
--1.0
2 3
2
✕0.8mm)
5
PW≤10μs
No. A0958-4/7
7
--10
IT12996
2
3