CTLDM304P-M832DS TR Central Semiconductor, CTLDM304P-M832DS TR Datasheet
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CTLDM304P-M832DS TR
Manufacturer Part Number
CTLDM304P-M832DS TR
Description
MOSFET SMD Sm Signal Mosfet Dual P-Ch Enhanced
Manufacturer
Central Semiconductor
Datasheet
1.CTLDM304P-M832DS_TR.pdf
(2 pages)
Specifications of CTLDM304P-M832DS TR
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
4.2 A
Resistance Drain-source Rds (on)
120 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TLM832DS
Gate Charge Qg
6.4 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
1.65 W
APPLICATIONS:
• Switching circuits
• DC-DC converters
• Power management
MAXIMUM RATINGS: (T A =25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T A =25°C unless otherwise noted)
SYMBOL
I GSSF , I GSSR
I DSS
BV DSS
V GS(th)
r DS(ON)
r DS(ON)
r DS(ON)
Q g(tot)
Q gs
Q gd
C rss
C iss
C oss
t on
t off
ENHANCEMENT-MODE
CTLDM304P-M832DS
DUAL P-CHANNEL
SURFACE MOUNT
SILICON MOSFET
TLM832DS CASE
TEST CONDITIONS
V GS =12V, V DS =0
V DS =24V, V GS =0
V GS =0, I D =250μA
V GS =V DS , I D =250μA
V GS =10V, I D =4.2A
V GS =4.5V, I D =4.0A
V GS =2.5V, I D =1.0A
V DS =15V, V GS =4.5V, I D =4.0A
V DS =15V, V GS =4.5V, I D =4.0A
V DS =15V, V GS =4.5V, I D =4.0A
V DS =15V, V GS =0, f=1.0MHz
V DS =15V, V GS =0, f=1.0MHz
V DS =15V, V GS =0, f=1.0MHz
V DD =15V, V GS =10V, I D =1.0A
R L =3.6Ω, R G =6.0Ω
V DD =15V, V GS =10V, I D =1.0A
R L =3.6Ω, R G =6.0Ω
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS
is a dual enhancement-mode P-Channel silicon MOSFET
designed for high speed pulsed amplifier and driver
applications. This energy efficient MOSFET offers
beneficially low r DS(ON) , low gate charge, and low
threshold voltage.
MARKING CODE: C430
FEATURES:
• Low r DS(ON)
• High drain current
• Low gate charge
SYMBOL
T J , T stg
V GS
V DS
I DM
Θ JA
MIN
P D
0.7
I D
30
TYP
760
1.0
6.4
1.8
1.4
60
64
86
53
50
40
75
-55 to +150
1.65
4.2
30
12
30
76
MAX
100
120
1.0
1.3
70
75
w w w. c e n t r a l s e m i . c o m
R1 (9-October 2012)
UNITS
UNITS
°C/W
mΩ
mΩ
mΩ
nC
nC
nC
nA
μA
pF
pF
pF
°C
ns
ns
W
V
V
A
A
V
V
Related parts for CTLDM304P-M832DS TR
CTLDM304P-M832DS TR Summary of contents
Page 1
... V DD =15V =10V =1. =3.6Ω =6.0Ω DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM304P-M832DS is a dual enhancement-mode P-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low r DS(ON) , low gate charge, and low threshold voltage ...
Page 2
... CTLDM304P-M832DS SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM832DS CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 5) Drain Q2 2) Source Q1 6) Drain Q2 3) Gate Q2 7) Drain Q1 4) Source Q2 8) Drain Q1 MARKING CODE: C430 ...