TPH4R008NH,L1Q Toshiba
TPH4R008NH,L1Q
Manufacturer Part Number
TPH4R008NH,L1Q
Description
MOSFET UMOSVIII 80V 4.0mOhm 100A 78A 59nC
Manufacturer
Toshiba
Specifications of TPH4R008NH,L1Q
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
3.3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOP-8
Fall Time
12 ns
Gate Charge Qg
59 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
78 W
Rise Time
86 ns
Tradename
UMOSVIII
Typical Turn-off Delay Time
52 ns
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