CTLDM3590 TR Central Semiconductor, CTLDM3590 TR Datasheet

CTLDM3590 TR

Manufacturer Part Number

CTLDM3590 TR

Description

MOSFET SMD Sm Signal Mosfet N-Channel Enh Mode

Manufacturer

Central Semiconductor

Datasheet

1.CTLDM3590_TR.pdf (3 pages)

Specifications of CTLDM3590 TR

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

8 V

Continuous Drain Current

160 mA

Resistance Drain-source Rds (on)

3 Ohms

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TLM3D6D8

Forward Transconductance Gfs (max / Min)

1.3 S

Gate Charge Qg

0.458 nC

Minimum Operating Temperature

- 65 C

Power Dissipation

125 mW

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APPLICATIONS:

• Load/Power Switches

• Boost/Buck Converters

• Battery Charging/Power Management

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Pulsed Drain Current, tp=10μs

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF , I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

Q g(tot)

Q gs

Q gd

g FS

C rss

C iss

C oss

t on

t off

ENHANCEMENT-MODE

SURFACE MOUNT

SILICON MOSFET

TLM3D6D8 CASE

N-CHANNEL

CTLDM3590

TEST CONDITIONS

V GS =5.0V, V DS =0

V DS =5.0V, V GS =0

V DS =16V, V GS =0

V GS =0, I D =250μA

V DS =V GS, I D =250μA

V GS =4.5V, I D =100mA

V GS =2.5V, I D =50mA

V GS =1.8V, I D =20mA

V GS =1.5V, I D =10mA

V GS =1.2V, I D =1.0mA

V DS =10V, V GS =4.5V, I D =100mA

V DS =5.0V, I D =125mA

V DS =15V, V GS =0, f=1.0MHz

V DD =10V, V GS =4.5V, I D =200mA

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CTLDM3590 is

an enhancement-mode N-channel MOSFET designed

for applications including high speed pulsed amplifiers

and drivers. This MOSFET has beneficially low

r DS(ON) , low threshold voltage, and very low gate

charge characteristics.

MARKING CODE: 1

FEATURES:

• ESD protection up to 2kV

• Power dissipation: 125mW

• Low r DS(ON)

• Low threshold voltage

• Ultra small, ultra low profile 0.6mm x 0.8mm x 0.4mm

SYMBOL

T J , T stg

TLM

V GS

V DS

Θ JA

MIN

P D

0.4

I D

leadless surface mount package

0.458

0.176

0.138

TYP

1.5

2.0

3.0

4.0

7.0

1.3

2.2

9.0

3.0

-65 to +150

1000

160

800

125

8.0

MAX

100

1.0

3.0

4.0

6.0

R3 (27-September 2012)

w w w. c e n t r a l s e m i . c o m

UNITS

°C/W

°C

Related parts for CTLDM3590 TR

CTLDM3590 TR Summary of contents

Page 1

... V DD =10V =4.5V =200mA DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM3590 is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers and drivers. This MOSFET has beneficially low r DS(ON) , low threshold voltage, and very low gate charge characteristics ...

Page 2

CTLDM3590 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM3D6D8 CASE - MECHANICAL OUTLINE PIN CONFIGURATION (Bottom View) LEAD CODE: 1) Gate 2) Source ...

Page 3

CTLDM3590 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TYPICAL ELECTRICAL CHARACTERISTICS (27-September 2012) ...

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