NTLUS3A18PZTBG ON Semiconductor, NTLUS3A18PZTBG Datasheet - Page 4

• Manufacturer Part Number: NTLUS3A18PZTBG
• Description: MOSFET T4S PCH 20/8V IN 2X2 UDFN
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A18PZTBG

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 5.1 A
• Resistance Drain-source Rds (on): 90 mOhms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: UDFN-6
• Power Dissipation: 1.7 W

1000.0
100.0
4000
3600
3200
2800
2400
2000
1600
1200
10.0
0.95
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
800
400
1.0
0
50
0
1
C
Figure 9. Resistive Switching Time Variation
V
V
I
D
rss
GS
DD
= −4.0 A
2
C
25
−V
= −4.5 V
= −15 V
iss
C
DS
Figure 7. Capacitance Variation
T
oss
4
J
Figure 11. Threshold Voltage
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
vs. Gate Resistance
6
, GATE RESISTANCE (W)
25
8
t
d(off)
50
10
10
t
d(on)
t
f
t
r
12
75
14
TYPICAL CHARACTERISTICS
I
D
100
= −250 mA
V
T
f = 1 MHz
GS
J
16
= 25°C
= 0 V
125
http://onsemi.com
18
150
100
20
4
10.0
225
200
175
150
125
100
5
4
3
2
1
0
0.1
1.0
75
50
25
0
0
10m
Q
0.3
GS
Figure 10. Diode Forward Voltage vs. Current
Drain−to−Source Voltage vs. Total Charge
T
V
5
−V
J
0.4
Figure 12. Single Pulse Maximum Power
DS
= 125°C
SD
Q
Figure 8. Gate−to−Source and
Q
G
, SOURCE−TO−DRAIN VOLTAGE (V)
, TOTAL GATE CHARGE (nC)
GD
1m
0.5
10
SINGLE PULSE TIME (s)
Q
0.6
T
Dissipation
15
100m
0.7
T
J
= −55°C
20
0.8
T
V
I
T
D
J
J
DS
10
= −4.0 A
= 25°C
= 25°C
V
GS
= −15 V
25
0.9
30
1000
18
16
14
12
10
8
6
4
2
0
1.0