FEPB6DT/81 Vishay Semiconductors, FEPB6DT/81 Datasheet - Page 3

• Manufacturer Part Number: FEPB6DT/81
• Description: Rectifiers 200 Volt 6.0A 35ns Dual Common Cathode
• Manufacturer: Vishay Semiconductors

Specifications of FEPB6DT/81

• Product Category: Rectifiers
• Product: Ultra Fast Recovery Rectifiers
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.975 V at 3 A
• Recovery Time: 35 ns
• Forward Continuous Current: 6 A
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88598
Revision: 07-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
100
0.1
Figure 1. Maximum Forward Current Derating Curve
10
80
70
60
50
40
30
20
10
10
8
6
4
2
0
0
1
0.4
0
1
0.6
25
Instantaneous Forward Voltage (V)
T
J
Number of Cycles at 60 Hz
= 125 °C
0.8
Case Temperature (°C)
50
Per Diode
1.0
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Resistive or Inductive Load
T
Pulse Width = 300 µs
1 % Duty Cycle
For technical questions within your region, please contact one of the following:
75
10
J
= 25 °C
1.2
100
1.4
125
1.6
150
100
1.8
FEP(F,B)6AT thru FEP(F,B)6DT
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
100
0.1
10
60
50
40
30
20
10
0
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
20
Reverse Voltage (V)
1
40
T
J
= 125 °C
T
J
T
= 25 °C
J
= 100 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
80
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100
100
3