AUIRFS3004-7PTR International Rectifier, AUIRFS3004-7PTR Datasheet - Page 2

• Manufacturer Part Number: AUIRFS3004-7PTR
• Description: MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET
• Manufacturer: International Rectifier

Specifications of AUIRFS3004-7PTR

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 400 A
• Resistance Drain-source Rds (on): 1.25 mOhms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK-7
• Power Dissipation: 380 W
• Factory Pack Quantity: 800

Static Electrical Characteristics @ T
V
V
R
V
gfs
R
I
I
Dynamic Electrical Characteristics @ T
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
g
gs
gd
sync
iss
oss
rss
oss
oss
rr
Notes:

‚
ƒ
Symbol
Symbol
Symbol
(BR)DSS
above this value .
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
2
eff. (ER) Effective Output Capacitance (Energy Related)
eff. (TR) Effective Output Capacitance (Time Related)
temperature. Bond wire current limit is 240A. Note that current
temperature.
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
R
G
= 25, I
/T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
AS
Jmax
= 240A, V
, starting T
Parameter
GS
Ãd
J
=10V. Part not recommended for use
= 25°C, L = 0.01mH
Parameter
Parameter
g
- Q
J
gd
= 25°C (unless otherwise specified)
)
J
= 25°C (unless otherwise specified)
h
Ã
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„
…
†
‡
ˆ
‰
Š
Min. Typ. Max. Units
1300
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.038 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
40
mended footprint and soldering techniques refer to application note #AN-994.
Pulse width  400μs; duty cycle  2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
I
C
as C
C
SD
oss
oss

JC
oss
 240A, di/dt  740A/μs, V
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
9130
2020
2590
2650
0.90
–––
–––
–––
–––
–––
–––
–––
160
240
160
990
––– 400
–––
–––
2.0
3.2
42
65
95
23
91
49
51
37
41
while V
DS
1610
1.25
-100
–––
–––
–––
250
100
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.3
20
is rising from 0 to 80% V
DS
™
is rising from 0 to 80% V
V/°C
m
μA
nA
nC
nC
pF
ns
ns

V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0 MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
DD
G
= 180A
= 180A, V
= 240A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 2.7
= V
= 10V, I
= 40V, V
= 40V, V
=20V
= 25V
V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 26V
= 10V
= 0V
= 0V, V
= 0V, V
(BR)DSS
GS
, I
DSS
D
g
g
S
D
DS
DS
D
D
DS
= 250μA
GS
GS
DSS
= 195A, V
, T
= 250μA
.
= 195A
= 195A
= 0V to 32V
= 0V to 32V
=0V, V
Conditions
Conditions
Conditions
J
= 0V
= 0V, T
.
 175°C.
V
I
di/dt = 100A/μs
F
R
= 240A
D
= 34V,
g
GS
= 5mA
J
GS
= 125°C
= 10V
= 0V
h
www.irf.com
d
, See Fig. 11
G
g
g
S
D