AUIRFS6535TRL International Rectifier, AUIRFS6535TRL Datasheet

AUIRFS6535TRL

Manufacturer Part Number

AUIRFS6535TRL

Description

MOSFET Automotive Power MOSFET; 300V 185mOhm

Manufacturer

International Rectifier

Datasheet

1.AUIRFS6535.pdf (13 pages)

Specifications of AUIRFS6535TRL

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

300 V

Continuous Drain Current

19 A

Resistance Drain-source Rds (on)

148 mOhms

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

D2PAK

Power Dissipation

210 W

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Features

●

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Thermal Resistance

HEXFET

*Qualification standards can be found at http://www.irf.com/

STG

JC

JA

AUIRFSL6535

@ T

AUIRFS6535

Advanced Process Technology

Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(tested )

Base part

number

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Package Type

) is 25°C, unless otherwise specified.

TO-262

D2Pak

Parameter

AUTOMOTIVE GRADE

Tape and Reel Right

Tape and Reel Left

Standard Pack

@ 10V

Form

Tube

Gate

AUIRFS6535

Quantity

Pak

800

HEXFET

(BR)DSS

DS(on)

See Fig.12a, 12b, 15, 16

Typ.

–––

Drain

-55 to + 175

Orderable Part Number

max.

typ.

Max.

100

210

± 20

216

310

300

1.4

AUIRFS6535TRR

AUIRFS6535TRL

AUIRFSL6535

AUIRFS6535

Power MOSFET

AUIRFSL6535

Max.

0.71

TO-262

Source

148m

185m

300V

19A

Units

W/°C

°C/W

°C

Related parts for AUIRFS6535TRL

AUIRFS6535TRL Summary of contents

Page 1

... Power MOSFET 300V typ. 148m max. 185m 19A TO-262 AUIRFSL6535 S Source AUIRFSL6535 AUIRFS6535 AUIRFS6535TRL AUIRFS6535TRR Max. Units 100 210 W 1.4 W/°C ± 216 mJ 310 A mJ °C 300 Max. ...

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS  V /T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 10 6.5V 6.0V 5.5V BOTTOM 5.0V 1 0.1 5.0V  60μs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C oss ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

DRIVER D.U 20V V GS 0.01  Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 10 0.01 0.05 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current vs.Pulsewidth 250 TOP Single Pulse ...

Page 8

... SD Reverse Recovery Body Diode Forward Current Current + D.U.T. V Waveform DS Diode Recovery Re-Applied + Voltage Body Diode - Inductor Curent Ripple  5% for N-Channel ® Power MOSFETs + -   d(off Period V =10V GS di/dt dv/ ...

Page 9

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ ...

Page 10

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html ...

Page 11

Dimensions are shown in millimeters (inches) TRR 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING ...

Page 12

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 13

...

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