DMP21D0UT-7 Diodes Inc. / Zetex, DMP21D0UT-7 Datasheet - Page 3

• Manufacturer Part Number: DMP21D0UT-7
• Description: MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMP21D0UT-7

• Rohs: yes

Electrical Characteristics
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMP21D0UT
D
atasheet Number: DS35297 Rev. 2 - 2
7. Short duration pulse test used to minimize self-heating effect.
1.5
0.5
2.0
1.0
0
0
-V , DRAIN-SOURCE VOLTAGE (V)
Characteristic
Fig. 3 Typical Output Characteristic
DS
1
V
GS
V
V
GS
= -2.5V
GS
V
= -3.0V
GS
= -4.0V
= -4.5V
2
J
= 25°C
@T
A
3
= 25°C unless otherwise specified
V
V
V
V
GS
GS
GS
GS
= -2.0V
= -1.8V
= -1.5V
= -1.2V
4
Symbol
R
BV
V
DS (ON)
t
t
5
I
I
|Y
C
www.diodes.com
V
C
C
Q
D(on)
D(off)
GS(th)
Q
GSS
DSS
R
Q
Q
t
SD
oss
t
DSS
rss
iss
gd
fs
gs
r
f
g
g
g
|
3 of 7
Min
-20
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
1.5
1.0
0.5
76.5
13.7
10.7
31.7
18.5
Typ
-0.7
195
1.5
1.0
0.2
0.3
7.1
8.0
0
-
-
-
-
-
-
0
V
DS
0.5
-V
Fig. 4 Typical Transfer Characteristic
Max
-1.2
±10
495
690
960
= -5V
-1
Diodes Incorporated
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T = 125°C
GS
A
T = 150°C
, GATE-SOURCE VOLTAGE (V)
A
A Product Line of
1.0
Unit
mΩ
mS
μA
μA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
V
T = -55°C
A
T = 25°C
1.5
A
T = 85°C
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
V
V
I
V
V
D
A
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DS
GS
GS
DS
GS
= -1A
= -20V, V
= V
= -3V, I
= -10V, V
= 0V, V
= -10V, -I
= 0V, I
= ±8V, V
= -4.5V, I
= -2.5V, I
= -1.8V, I
= 0V, I
= -8V,V
= -4.5V, V
= -4.5V, R
2.0
GS
Test Condition
, I
DMP21D0UT
D
S
D
GS
DS
D
= -250μA
= -300mA
DS
= -300mA
D
D
D
D
GS
GS
= -250μA
2.5
DS
G
= 0V, f = 1MHz
= -15V,I
= -400mA
= -300mA
= -100mA
= 1A
© Diodes Incorporated
= 0V
= 6Ω
= 0V
= 0V,
= -15V,
March 2012
3.0
D
= -1A