DMN65D8LDW-7 Diodes Inc. / Zetex, DMN65D8LDW-7 Datasheet - Page 3

no-image

DMN65D8LDW-7

Manufacturer Part Number
DMN65D8LDW-7
Description
MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
Manufacturer
Diodes Inc. / Zetex
Datasheet

Specifications of DMN65D8LDW-7

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN65D8LDW-7
Manufacturer:
DIODES
Quantity:
300
Part Number:
DMN65D8LDW-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN65D8LDW-7
0
Company:
Part Number:
DMN65D8LDW-7
Quantity:
5 000
DMN65D8LDW
Document number: DS35500 Rev. 5 - 2
0.6
0.5
0.4
0.3
0.2
0.1
- 50
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
5
4
3
2
1
0
0
0
0
0
Fig. 5 On-Resistance Variation with Temperature
-25
T , JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE (V)
J
0.1
DS
Fig.1 Typical Output Characteristic
1
Fig. 3 Typical On-Resistance vs.
Drain Current and Temperature
0
I , DRAIN CURRENT
0.2
D
25
2
I = 115mA
D
V
GS
50
0.3
= 5V
I = 115mA
V
V
D
GS
GS
75
3
= 5V
V
=
GS
0.4
10
= 10V
V
100
°
4
0.5
125
150
0.6
5
www.diodes.com
3 of 6
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
-50
1
0
50
Fig. 4 On-Resistance Variation with Temperature
V
-25
0.5
DS
-25
T , JUNCTION TEMPERATURE ( C)
Fig.2 Typical Transfer Characteristics
J
= 5.0V
T , JUNCTION TEMPERATURE ( C)
J
V
1.0
0
GS
T = 125°C
A
0
, GATE-SOURCE VOLTAGE
T = 150°C
A
25
1.5
25
50
2.0
I = 250µA
D
50
T = -55°C
A
T = 25°C
75
A
T = 85°C
2.5
A
75
DMN65D8LDW
I = 115mA
V
D
GS
100
3.0
I = 1mA
100
=
D
10
°
I = 115mA
V
D
V
°
125
GS
© Diodes Incorporated
3.5 4.0
125
= 5V
August 2012
150
150

Related parts for DMN65D8LDW-7