ZXTN4000ZTA Diodes Inc. / Zetex, ZXTN4000ZTA Datasheet - Page 3

• Manufacturer Part Number: ZXTN4000ZTA
• Description: MOSFET Pwr Mid Perf Trans SOT89 T&R 1K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXTN4000ZTA

• Rohs: yes

Electrical Characteristics
Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Notes:
Datasheet Number: DS35676 Rev. 1 - 2
ZXTN4000Z
7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Characteristic
250
200
150
100
50
100µ
0
85°C
125°C
25°C
-55°C
I
C
1m
Collector Current (A)
h
@T
@T
FE
A
A
v I
= 25°C unless otherwise specified
= 25°C unless otherwise specified
10m
C
Symbol
V
BV
BV
V
100m
BV
CE
I
I
BE(on)
h
CBO
EBO
t
t
t
t
t
t
=0.15V
(d)
(r)
(s)
(s)
FE
(f)
(f)
CBO
CEO
EBO
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3 of 5
Min
100
60
60
60
7
-
-
-
-
-
-
-
-
-
1.0
0.8
0.6
0.4
0.2
25
20
15
10
100m
100µ
5
0
0.76
Typ
300
292
805
226
202
8.3
25
V
-
-
-
-
CE
=0.15V
Capacitance v Voltage
I
Max
0.95
C
50
50
V
Diodes Incorporated
1m
-
-
-
-
-
-
-
-
-
-
-
BE(on)
Collector Current (A)
Cobo
A Product Line of
1
25°C
Voltage(V)
Unit
nA
nA
ns
ns
ns
ns
ns
ns
v I
V
V
V
V
-
10m
C
-55°C
I
I
I
V
V
I
I
I
V
-I
V
-I
85°C
C
C
E
C
C
C
B2
B2
CB
EB
CC
CC
= 100µA
= 100µA
= 10mA
= 85mA, V
= 150mA, V
= 150mA, V
= 1.5mA, V
= 1.5mA, V
= 7V
= 60V
= 48V, I
= 48V, I
10
Test Condition
100m
f = 1MHz
ZXTN4000Z
125°C
C
C
CE
= 150mA,
= 150mA,
CE
CE
CE(ON)
CE(ON)
© Diodes Incorporated
= 0.1V
= 0.15V
= 0.15V
January 2012
= 0.15V
= 4V