DSS4160T-7 Diodes Inc., DSS4160T-7 Datasheet - Page 2

• Manufacturer Part Number: DSS4160T-7
• Description: MOSFET SS Low Sat Transisto SOT23 T&R 3K
• Manufacturer: Diodes Inc.

Specifications of DSS4160T-7

• Rohs: yes

Thermal Characteristics
Thermal Characteristics
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current (DC)
Peak Base Current
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Notes:
DSS4160T
Document number: DS35531 Rev. 1 - 2
4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25.
5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
100m
100µ
10m
180
160
140
120
100
1m
10
80
60
40
20
100µ
0.1
Transient Thermal Impedance
1
0
V
Limit
D=0.5
D=0.2
CE(sat)
DC
100ms
T
1s
V
Characteristic
amb
Characteristic
CE
1m
=25°C
@T
Safe operating Area
Collector-Emitter Voltage (V)
10ms
A
10m 100m
= 25°C unless otherwise specified
Pulse Width (s)
1
@T
1ms
A
= 25°C unless otherwise specified
D=0.1
100µs
1
D=0.05
10
Single Pulse
10
15mm x 15mm
T
1oz FR4
amb
=25°C
100
www.diodes.com
100
1k
2 of 6
Symbol
Symbol
T
V
V
V
J
I
I
R
R
, T
100
CBO
CEO
EBO
CM
I
I
BM
0.8
0.6
0.4
0.2
0.0
P
C
B
10
100µ
θ JA
θ JA
D
1
STG
0
20
Pulse Power Dissipation
1m
Derating Curve
40
Temperature (°C)
10m 100m
Pulse Width (s)
60
-55 to +150
Value
Value
300
725
172
80
80
60
79
5
1
2
1
1
100 120 140 160
10
Single Pulse
T
amb
=25°C
100
DSS4160T
1k
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
mW
mA
°C
V
V
V
A
A
A
January 2012