SISA18ADN-T1-GE3 Vishay Semiconductors, SISA18ADN-T1-GE3 Datasheet

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SISA18ADN-T1-GE3

Manufacturer Part Number
SISA18ADN-T1-GE3
Description
MOSFET 30V 7.5mOhm@10V 18A N-Ch G-IV
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SISA18ADN-T1-GE3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+ 20 V, - 16 V
Continuous Drain Current
38.3 A
Resistance Drain-source Rds (on)
0.0096 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK
Fall Time
7 ns
Forward Transconductance Gfs (max / Min)
54 S
Gate Charge Qg
14.3 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
19.8 W
Rise Time
10 ns
Typical Turn-off Delay Time
15 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SISA18ADN-T1-GE3
Manufacturer:
V1SHAY
Quantity:
20 000
Company:
Part Number:
SISA18ADN-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on T
Document Number: 63259
S13-0112-Rev. A, 21-Jan-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
Ordering Information:
SiSA18ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
8
C
3.30 mm
D
= 25 °C.
0.0120 at V
0.0075 at V
7
R
D
DS(on)
6
D
() (Max.)
5
GS
GS
PowerPAK
D
J
= 150 °C)
= 4.5 V
= 10 V
a, e
Bottom View
1
S
N-Channel 30 V (D-S) MOSFET
For technical questions, contact:
2
®
S
1212-8
3
I
D
S
38.3
30.2
3.30 mm
(A)
Steady State
This document is subject to change without notice.
4
G
f
c, d
t  10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted)
6.9 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
pmostechsupport@vishay.com
I
P
, T
I
DM
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• TrenchFET
• 100 % R
• Material categorization:
• DC/DC Power Supplies
• High Current Power Rails in Computing
• Telecom POL and Bricks
• Battery Protection
For definitions of compliance please see
www.vishay.com/doc?99912
Typical
31
g
5
and UIS Tested
®
Gen IV Power MOSFET
- 55 to 150
+ 20, - 16
15.3
12.1
2.9
3.2
Limit
38.3
30.6
19.8
12.7
3
260
30
70
18
10
a, b
5
a, b
a, b
a, b
a, b
Maximum
6.3
39
Vishay Siliconix
SiSA18ADN
www.vishay.com/doc?91000
G
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
mJ
°C
D
W
S
V
A
1

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SISA18ADN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: SiSA18ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiSA18ADN Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 1.5 1.3 1.1 0.9 0 On-Resistance vs. Junction Temperature pmostechsupport@vishay.com This document is subject to change without notice. SiSA18ADN Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...

Page 4

... SiSA18ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 ° 0.1 0.01 0.001 0.0 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0 250 μ 0 100 T - Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 www.vishay.com For technical questions, contact: ...

Page 5

... Case Temperature (°C) C Current Derating* 2.0 1.6 1.2 0.8 0.4 0.0 0 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper pmostechsupport@vishay.com This document is subject to change without notice. SiSA18ADN Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com www.vishay.com/doc?91000 ...

Page 6

... SiSA18ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 0.0001 0.001 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

PowerPAK 1212-8, (SINGLE/DUAL Notes: 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs DIM. MIN. A 0.97 A1 0.00 b ...

Page 8

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 9

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 10

TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package Configuration Single Thermal Resiatance R (C/W) thJC PowerPAK 1212 49.8 °C 2.4 °C/W PC Board at 45 °C THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal ...

Page 11

AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 ...

Page 12

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions ...

Page 13

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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