5LN01S-TL-E ON Semiconductor, 5LN01S-TL-E Datasheet
5LN01S-TL-E
Specifications of 5LN01S-TL-E
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5LN01S-TL-E Summary of contents
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... Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7027-004 5LN01S-TL-E 1.6 0.8 0.4 0 Gate 2 : Source 3 : Drain 0.1 MIN ...
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... =500Ω PW=10μ OUT D.C.≤1% G 5LN01S P.G 50Ω S Ordering Information Device 5LN01S-TL-E 5LN01S Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =50V =0V I GSS V GS =±8V = (off =10V =100μA | yfs | V DS =10V =50mA ...
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... Ta=75°C 10 25°C 7 --25° 1 0.01 0.1 Drain Current (on --60 --40 -- 100 Ambient Temperature °C 5LN01S 0.20 0.18 0.16 0. =1.5V 0.12 0.10 0.08 0.06 0.04 0.02 0 0.8 1.0 0 0.5 IT00054 100 Ta=25° 1 0.01 IT00056 100 V GS =2.5V ...
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... Ciss 7 5 Coss 3 2 Crss 1 Drain-to-Source Voltage 0.20 0.15 0.10 0. 100 Ambient Temperature °C 5LN01S 1000 100 1.0 1.1 0.01 IT00062 10 f=1MHz V DS =10V =100mA ...
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... Embossed Taping Specifi cation 5LN01S-TL-E 5LN01S No.6561-5/7 ...
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... Outline Drawing 5LN01S-TL-E 5LN01S Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 0.6 0.5 0.5 No.6561-6/7 ...
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... Note on usage : Since the 5LN01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...