BZX884-B30 T/R NXP Semiconductors, BZX884-B30 T/R Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BZX884-B30 T/R
Manufacturer Part Number
BZX884-B30 T/R
Description
Zener Diodes DIODE ZENER 2 PCT TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.BZX884-C16_TR.pdf
(10 pages)
Specifications of BZX884-B30 T/R
Product Category
Zener Diodes
Rohs
yes
Zener Voltage
30 V
Voltage Tolerance
2 %
Voltage Temperature Coefficient
26.6 mV/k
Power Dissipation
250 mW
Maximum Reverse Leakage Current
0.05 uA
Maximum Zener Impedance
80 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOD-882
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
BZX884-B30,315
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
2004 Mar 26
BZX884-B2V4
to
BZX884-B75
BZX884-C2V4
to
BZX884-C75
I
I
P
T
T
R
F
ZSM
stg
j
tot
Voltage regulator diodes
th(j-a)
NUMBER
SYMBOL
SYMBOL
TYPE
continuous forward current
non-repetitive peak reverse
current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to ambient
NAME
−
−
PARAMETER
PARAMETER
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
Leadless ultra small plastic package;2 terminals; body 1.0 x
0.6 x 0.5 mm
t
T
T
p
amb
amb
= 100 μs; square wave;
3
= 25 °C; prior to surge
= 25 °C; note 1
DESCRIPTION
PACKAGE
CONDITIONS
note 1
CONDITIONS
−
see Tables 1 and
2
−
−65
−
MIN.
BZX884 series
Product data sheet
200
250
+150
150
VALUE
MAX.
500
VERSION
SOD882
SOD882
mA
mW
°C
°C
UNIT
UNIT
K/W