MCH3377-S-TL-E ON Semiconductor, MCH3377-S-TL-E Datasheet - Page 4

• Manufacturer Part Number: MCH3377-S-TL-E
• Description: MOSFET
• Manufacturer: ON Semiconductor

Specifications of MCH3377-S-TL-E

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Continuous Drain Current: - 3 A
• Resistance Drain-source Rds (on): 83 mOhms
• Mounting Style: SMD/SMT
• Package / Case: MCPH-3
• Power Dissipation: 1 W

--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0
V DS = --10V
I D = --3A
20
1
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
60
V GS -- Qg
P D -- Ta
2
80
3
100
120
4
140
IT13018
IT13016
160
MCH3377
5
--0.01
--1.0
--0.1
--10
--0.01
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm
2 3
Drain-to-Source Voltage, V DS -- V
5 7
Operation in this area
is limited by R DS (on).
--0.1
2 3
A S O
5 7
--1.0
2
✕0.8mm)
2 3
5
No.A0957-4/7
PW≤10μs
7
--10
IT13017
2
3