IXFN210N30P3 Ixys, IXFN210N30P3 Datasheet - Page 3
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IXFN210N30P3
Manufacturer Part Number
IXFN210N30P3
Description
MOSFET N-Channel
Manufacturer
Ixys
Datasheet
1.IXFN210N30P3.pdf
(5 pages)
Specifications of IXFN210N30P3
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
192 A
Resistance Drain-source Rds (on)
14.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-227B
Fall Time
13 ns
Gate Charge Qg
268 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 kW
Rise Time
25 ns
Typical Turn-off Delay Time
94 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN210N30P3
Manufacturer:
MITSUBISHI
Quantity:
87
© 2012 IXYS CORPORATION, All Rights Reserved
200
160
120
200
160
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
40
80
40
0
0
0
0
0
V
GS
Fig. 5. R
= 10V
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
50
DS(on)
2
1
100
Normalized to I
Drain Current
1.5
I
3
V
D
V
DS
DS
- Amperes
150
- Volts
- Volts
V
2
4
V
GS
GS
D
= 10V
= 10V
= 105A Value vs.
8V
7V
200
8V
2.5
5
J
T
J
J
= 125ºC
= 25ºC
= 125ºC
6V
5V
T
7V
6V
4V
5V
J
250
= 25ºC
3
6
3.5
300
7
300
250
200
150
100
200
180
160
140
120
100
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
50
80
60
40
20
0
0
-50
-50
0
V
V
Fig. 2. Extended Output Characteristics @ T
GS
GS
Fig. 4. R
= 10V
= 10V
-25
-25
8V
Fig. 6. Maximum Drain Current vs.
DS(on)
5
0
0
7V
6V
5V
Junction Temperature
T
Normalized to I
Case Temperature
T
C
25
J
25
- Degrees Centigrade
- Degrees Centigrade
V
IXFN210N30P3
DS
10
50
50
- Volts
D
I
75
75
D
= 105A Value vs.
= 210A
100
100
15
I
D
J
= 105A
= 25ºC
125
125
150
150
20