DMP3105LVT-7 Diodes Inc., DMP3105LVT-7 Datasheet - Page 3

• Manufacturer Part Number: DMP3105LVT-7
• Description: MOSFET MOSFET BVDSS
• Manufacturer: Diodes Inc.

Specifications of DMP3105LVT-7

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 3.9 A
• Resistance Drain-source Rds (on): 75 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOT26-6
• Fall Time: 64 ns
• Forward Transconductance Gfs (max / Min): 5 S
• Gate Charge Qg: 19.8 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.15 W
• Rise Time: 17.7 ns
• Typical Turn-off Delay Time: 269 ns

DMP3105LVT
Document number: DS35504 Rev. 2 - 2
0.16
0.12
0.08
0.04
12
0.2
8
4
0
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0
0
-50
0
Fig. 5 On-Resistance Variation with Temperature
-25
-V , DRAIN -SOURCE VOLTAGE(V)
0.5
Fig. 1 Typical Output Characteristics
T , JUNCTION TEMPERATURE ( C)
DS
J
Fig. 3 Typical On-Resistance vs.
3
I , DRAIN SOURCE CURRENT
Drain Current and Gate Voltage
D
0
1
25
6
1.5
50
9
75
2
100
V
GS
2.5
12
V
V
= -2.5V
GS
°
GS
125
= -10V
= -4.5V
3
150
15
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0.16
0.12
0.08
0.04
0.16
0.12
0.08
0.04
12
10
0.2
0.2
8
6
4
2
0
0
0
-50
0
0
V
DS
V
Fig. 6 On-Resistance Variation with Temperature
GS
= -5.0V
= 4.5V
-25
Fig. 2 Typical Transfer Characteristics
0.5
-V
T , JUNCTION TEMPERATURE ( C)
GS
Fig. 4 Typical On-Resistance vs.
J
Drain Current and Temperature
, GATE SOURCE VOLTAGE(V)
4
0
I , DRAIN CURRENT (A)
D
1
25
T =85°C
A
1.5
50
8
75
T =125°C
2
DMP3105LVT
A
T =25°C
A
100
12
2.5
T =150°C
© Diodes Incorporated
A
°
November 2011
125
T =-55°C
A
150
3
16