SSM6N55NU,LF Toshiba
SSM6N55NU,LF
Manufacturer Part Number
SSM6N55NU,LF
Description
MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD
Manufacturer
Toshiba
Specifications of SSM6N55NU,LF
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
4 A
Resistance Drain-source Rds (on)
64 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
UDFN-6
Gate Charge Qg
2.5 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
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