PSMN013-30YLC,115 NXP Semiconductors, PSMN013-30YLC,115 Datasheet - Page 2
PSMN013-30YLC,115
Manufacturer Part Number
PSMN013-30YLC,115
Description
MOSFET N-CH 30 V 13.6 MOHMS LOGIC LEVEL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN013-30YLC115.pdf
(15 pages)
Specifications of PSMN013-30YLC,115
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
32 A
Resistance Drain-source Rds (on)
16.9 mOhms
Mounting Style
SMD/SMT
Package / Case
SO-8
Power Dissipation
26 W
Factory Pack Quantity
1500
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN013-30YLC
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN013-30YLC
Symbol
V
V
V
I
I
P
T
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
ESD
DS(AL)S
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
electrostatic discharge voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
LFPAK; Power-SO8
source
source
source
gate
mounting base; connected to drain
Package
Name
N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology
All information provided in this document is subject to legal disclaimers.
Description
plastic single-ended surface-mounted package; 4 leads
Rev. 3 — 24 October 2011
MM (JEDEC JESD22-A115)
Conditions
25 °C ≤ T
25 °C ≤ T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
see
mb
mb
GS
GS
GS
sup
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
Simplified outline
SOT669 (LFPAK; Power-SO8)
p
p
j
j
≤ 10 µs; T
≤ 10 µs; T
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 25 °C; see
= 100 °C; see
1 2 3 4
= 50 Ω; unclamped;
Figure 2
= 25 °C; I
mb
mb
mb
GS
= 25 °C;
= 25 °C
= 20 kΩ
D
= 32 A;
Figure 1
PSMN013-30YLC
Figure 1
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
130
-
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
SOT669
175
175
-
Version
Max
30
30
20
32
23
130
26
260
23
130
7
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
V
A
A
mJ
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