AUIRF3205 International Rectifier, AUIRF3205 Datasheet

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AUIRF3205

Manufacturer Part Number
AUIRF3205
Description
MOSFET 55V, 98A, 8mOhm Automotive MOSFET
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRF3205

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Continuous Drain Current
98 A
Resistance Drain-source Rds (on)
8 mOhms
Mounting Style
Through Hole
Package / Case
TO-220AB
Gate Charge Qg
97.3 nC
Power Dissipation
150 W
Factory Pack Quantity
50

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRF3205
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3205L
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3205S
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3205Z
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3205ZS
Manufacturer:
IR
Quantity:
12 500
Part Number:
AUIRF3205ZS
Manufacturer:
IR
Quantity:
20 000
Part Number:
AUIRF3205ZSTRL
Manufacturer:
IR
Quantity:
20 000
Features
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www.irf.com
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other appli-
cations.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
I
P
V
E
I
E
T
T
Thermal Resistance
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS
AR
JC
CS
JA
@ T
@ T
@ T
@T
C
C
C
C
®
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
is a registered trademark of International Rectifier.
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
j
A
) is 25°C, unless otherwise specified.
Parameter
Parameter
AUTOMOTIVE GRADE
GS
GS
GS
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
h
G
D
S
d
Gate
G
V
R
I
I
D (Silicon Limited)
D (Package Limited)
(BR)DSS
DS(on)
HEXFET
D
Typ.
AUIRF3205
0.50
–––
–––
AUIRF3205
TO-220AB
10 lbf
max.
-55 to + 175
Drain
D
y
110
264
Max.
in (1.1N
80
300
®
390
200
± 20
1.3
75
62
20
g
G
Power MOSFET
g
i
D
S
Max.
y
0.75
–––
m)
62
110A
8.0m
PD - 97741
Source
55V
75A
S
Units
Units
W/°C
°C/W
11/10/11
mJ
mJ
°C
W
A
V
A
1

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AUIRF3205 Summary of contents

Page 1

... Limited 10V (Silicon Limited 10V (Package Limited Parameter Typ 97741 AUIRF3205 ® Power MOSFET 55V max. 8.0m 110A 75A TO-220AB AUIRF3205 D S Drain Source Max. Units g 110 390 200 W 1.3 W/°C ± 264 mJ 62 ...

Page 2

... AUIRF3205 Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS V /T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Class M4 (+/- 600V) AEC-Q101-002 Class H1C (+/- 2000V) AEC-Q101-001 Class C5 (+/- 2000V) AEC-Q101-005 Yes AUIRF3205 †† N/A ††† ††† ††† 3 ...

Page 4

... AUIRF3205 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 4.5V 20μs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS 1000 ° 175 C J 100 25V DS 20μs PULSE WIDTH Gate-to-Source Voltage ( 1000 TOP ...

Page 5

... Q , Total Gate Charge (nC) 10000 OPERATION IN THIS AREA LIMITED 1000 100 ° ° 175 Single Pulse 2.0 2 AUIRF3205 V = 44V 27V 11V 100 120 DS(on) 10us 100us 1ms 10ms 10 100 1000 , Drain-to-Source Voltage (V) ...

Page 6

... AUIRF3205 120 LIMITED BY PACKAGE 100 100 125 T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 SINGLE PULSE 0.02 (THERMAL RESPONSE) 0.01 0.01 0.00001 0.0001 6     ...

Page 7

... Charge www.irf.com 15V 500 DRIVER 400 + 300 200 100 Starting T , Junction Temperature ( C) (BR)DSS 12V V AUIRF3205 I D TOP 25A 44A BOTTOM 62A 75 100 125 150 175 ° J Current Regulator Same Type as D.U.T. 50K .2F .3 D.U. 3mA ...

Page 8

... AUIRF3205 D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent 8  +  ƒ  - „     ...

Page 9

... AUIRF3205 9 ...

Page 10

... AUIRF3205 Ordering Information Base part Package Type number AUIRF3205 TO-220 10 Standard Pack Complete Part Number Form Quantity Tube 50 AUIRF3205 www.irf.com ...

Page 11

... N. Sepulveda Blvd., El Segundo, California 90245 www.irf.com WORLD HEADQUARTERS: Tel: (310) 252-7105 AUIRF3205 11 ...

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