ZXMP4A57E6TA Diodes Inc. / Zetex, ZXMP4A57E6TA Datasheet - Page 3

• Manufacturer Part Number: ZXMP4A57E6TA
• Description: MOSFET MOSFET BVDSS 31V-40 SOT26,3K
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZXMP4A57E6TA

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3.7 A
• Resistance Drain-source Rds (on): 80 mOhms at -10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-26
• Fall Time: 21 ns
• Gate Charge Qg: 7 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 3.3 ns
• Typical Turn-off Delay Time: 47 ns

Thermal Characteristics
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
P-channel Safe Operating Area
100m
10m
Transient Thermal Impedance
100
10
80
60
40
20
100µ
1
0
R
Limited
D=0.5
Single Pulse, T
D=0.2
DS(ON)
-V
DC
1m
DS
1s
Drain-Source Voltage (V)
10m 100m
100ms
1
Pulse Width (s)
amb
=25°C
10ms
1
1ms
D=0.1
D=0.05
Single Pulse
100us
10
10
100
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100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
100µ
1
0
Pulse Power Dissipation
1m
25
Derating Curve
10m 100m
Temperature (°C)
Diodes Incorporated
50
Pulse Width (s)
A Product Line of
75
1
100
Single Pulse
T
amb
10
125
=25°C
ZXMP4A57E6
100
150
© Diodes Incorporated
1k
March 2011