DMP1245UFCL-7 Diodes Inc. / Zetex, DMP1245UFCL-7 Datasheet - Page 5

• Manufacturer Part Number: DMP1245UFCL-7
• Description: MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF
• Manufacturer: Diodes Inc. / Zetex

Specifications of DMP1245UFCL-7

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: - 6.6 A
• Resistance Drain-source Rds (on): 25 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: X1-DFN1616-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 613 mW

DMP1245UFCL
Document number: DS35505 Rev. 1 - 2
100,000
10,000
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
1,000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
8
6
4
2
0
0
-50
Fig. 12 Typical Drain-Source Leakage Current vs. Voltage
10
0
1
0
-25
T , AMBIENT TEMPERATURE (°C)
Fig. 14 Gate-Charge Characteristics
5
A
V , DRAIN-SOURCE VOLTAGE (V)
Q , TOTAL GATE CHARGE (nC)
2
DS
g
0
10
25
4
50
15
6
75
V
I = -250µA
DS
I = -1A
D
20
D
T = 150°C
= -10V
8
A
100
T = 85°C
A
I = -1mA
D
25
T = 125°C
T = 25°C
125
A
A
10
150
30
12
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2,500
2,000
1,500
1,000
20
16
12
8
4
0
500
0.4
0
0
Fig. 11 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Junction Capacitance
SD
DS
0.6
4
Diodes Incorporated
A Product Line of
8
0.8
T = 25°C
A
12
DMP1245UFCL
1
© Diodes Incorporated
16
November 2011
C
C
C
ISS
RSS
OSS
1.2
20