TPH12008NH,L1Q Toshiba
TPH12008NH,L1Q
Manufacturer Part Number
TPH12008NH,L1Q
Description
MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W
Manufacturer
Toshiba
Specifications of TPH12008NH,L1Q
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
44 A
Resistance Drain-source Rds (on)
10.1 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOP-8
Fall Time
7.4 ns
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
48 W
Rise Time
5 ns
Typical Turn-off Delay Time
24 ns
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