FESB16BT-E3/31 Vishay Semiconductors, FESB16BT-E3/31 Datasheet - Page 3
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FESB16BT-E3/31
Manufacturer Part Number
FESB16BT-E3/31
Description
Rectifiers 100 Volt 16 Amp 35ns Single
Manufacturer
Vishay Semiconductors
Datasheet
1.FESB16DT81.pdf
(5 pages)
Specifications of FESB16BT-E3/31
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single Dual Cathode
Reverse Voltage
100 V
Forward Voltage Drop
0.975 V
Recovery Time
35 ns
Forward Continuous Current
16 A
Max Surge Current
250 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
TO-263AB
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
800
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88599
Revision: 07-Jan-08
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
300
250
200
150
100
100
Figure 1. Maximum Forward Current Derating Curve
0.1
20
16
12
50
10
8
4
0
0
1
0.2
1
0
T
J
= 125 °C
0.4
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
0.6
Case Temperature (°C)
50
0.8
T
8.3 ms Single Half Sine-Wave
JEDEC Method
J
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Resistive or Inductive Load
= T
For technical questions within your region, please contact one of the following:
10
J
max.
1.0
T
100
J
= 25 °C
1.2
50 - 200 V
300 - 400 V
500 - 600 V
1.4
150
100
1.6
FES(F,B)16AT thru FES(F,B)16JT
1000
1000
100
100
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
50 - 400 V
500 - 600 V
Reverse Voltage (V)
1
T
T
J
J
= 100 °C
40
= 25 °C
60
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
T
50 - 200 V
300 - 400 V
J
80
= 25 °C
www.vishay.com
100
100
3