VS-CPV363M4KPBF Vishay Semiconductors, VS-CPV363M4KPBF Datasheet - Page 7

• Manufacturer Part Number: VS-CPV363M4KPBF
• Description: IGBT Transistors 600 Volt 6.0 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-CPV363M4KPBF

• Product Category: IGBT Transistors
• Rohs: yes
• Configuration: Hex
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Package / Case: IMS-2-13
• Continuous Collector Current Ic Max: 11 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole

Document Number: 94485
Revision: 01-Sep-08
Fig. 14 - Typical Reverse Recovery Time vs. dI
100
160
120
10
80
40
1
0
1
Fig. 15 - Typical Recovery Current vs. dI
1
0
0
0
0
I = 6.0A
V = 200V
T = 125°C
T = 25°C
F
R
J
J
I = 12A
F
di /dt - (A/µs)
I = 24A
F
di /dt - (A/µs)
f
f
I = 24A
F
V = 200V
T = 125°C
T = 25°C
I = 12A
F
R
J
J
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I = 6.0A
F
F
1
1
(Short Circuit Rated
/dt
0
0
0
IGBT SIP Module
0
0
F
0
/dt
Ultrafast IGBT)
10000
1000
100
600
400
200
10
0
1
1
0
0
0
0
Fig. 16 - Typical Stored Charge vs. dI
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Fig. 17 - Typical dI
V = 200V
T = 125°C
T = 25°C
V = 200V
T = 125°C
T = 25°C
R
J
J
R
J
J
I = 6.0A
F
I = 24A
F
di /dt - (A/µs)
di /dt - (A/µs)
I = 6.0A
F
CPV363M4KPbF
f
f
I = 12A
F
(rec)M
I = 12A
I = 24A
/dt vs dI
F
F
F
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/dt
F
/dt
1
1
0
0
0
0
0
0
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