AUIRGSL4062D1 International Rectifier, AUIRGSL4062D1 Datasheet - Page 2

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AUIRGSL4062D1

Manufacturer Part Number
AUIRGSL4062D1
Description
IGBT Transistors Automotive 600V 24A T in a D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRGSL4062D1

Rohs
yes
AUIRGB/S/SL4062D1
Electrical Characteristics @ T
V
Δ V
V
V
Δ V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
Notes:

ƒ
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
V
Pulse width limited by max. junction temperature.
R
Maximum limits are based on statistical sample size characterization.
2
CC
θ
is measured at T
/Δ TJ
= 80% (V
/ΔT
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
), V
J
GE
of approximately 90°C.
= 20V, L = 210μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 50Ω.
Min.
Min.
600
4.0
FULL SQUARE
5
Typ.
Typ.
1275
1487
1.57
1.87
1.94
1.57
1.40
1.47
532
311
843
726
549
118
773
102
0.3
-17
1.0
3.5
12
51
14
21
19
24
90
23
12
23
92
84
44
32
Max. Units
Max. Units
1280
1.77
±100
754
526
109
6.5
25
77
21
32
36
41
40
mV/°C V
V/°C V
mA
μA
nA
nC
pF
μJ
ns
μJ
ns
μs
μJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
I
I
I
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
I
R
I
R
Energy losses include tail & diode reverse recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 10Ω, V
V
Rg = 10Ω, V
T
V
V
C
C
C
F
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
J
CC
CC
J
CC
GE
G
G
G
G
= 24A
= 19A
= 24A, T
= 24A, V
= 24A, V
= 24A, V
= 24A
= 24A, V
= 24A, V
= 24A, V
= 24A, V
=10Ω, L= 210μH,T
= 175°C
= 175°C, I
= 175°C
= 10Ω, L = 210μH, T
= 10Ω, L = 210μH, T
= 10Ω, L = 200μH, L
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp
= 400V, Vp
= 200V, I
= 15V, Rg = 10Ω, L =210μH
Conditions
GE
GE
, I
, I
C
C
J
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
C
= 175°C
= 100μA
= 10mA (25°C-175°C)
GE
GE
C
= 700μA
= 1.0mA (25°C - 175°C)
F
= 15V, T
= 15V, T
= 15V, T
= 24A, PW = 20μs
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= 600V
= 600V, T
= 96A
= 24A
= +20V to 0V
= +15V to 0V
Ã
600V
600V
J
J
J
J
Conditions
= 175°C
GE
GE
GE
GE
= 25°C
= 150°C
= 175°C
S
J
J
J
= 25°C
= 25°C
= 150nH
= 175°C
=15V
= 15V
= 15V
= 15V
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