NGTB30N120IHSWG ON Semiconductor, NGTB30N120IHSWG Datasheet - Page 6

• Manufacturer Part Number: NGTB30N120IHSWG
• Description: IGBT Transistors 1200/30A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

0.001
0.001
0.01
0.01
0.000001
0.000001
0.1
0.1
10
1
1
20%
10%
50% Duty Cycle
10%
5%
5%
1%
2%
2%
1%
50% Duty Cycle
20%
Single Pulse
Single Pulse
0.00001
0.00001
0.0001
0.0001
Figure 21. Test Circuit for Switching Characteristics
Figure 20. Diode Transient Thermal Impedance
Figure 19. IGBT Transient Thermal Impedance
TYPICAL CHARACTERISTICS
0.001
0.001
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PULSE TIME (sec)
PULSE TIME (sec)
0.01
0.01
C
C
i
i
Junction
Junction
= t
= t
6
i
i
/R
/R
i
i
R
C
R
C
1
1
1
1
0.1
0.1
R
C
R
C
2
2
2
2
Duty Factor = t
Peak T
Duty Factor = t
Peak T
R
1
1
qJC
R
= 2.0
J
J
qJC
= P
= P
= 0.65
R
R
C
DM
C
DM
n
n
n
n
1
1
10
10
x Z
x Z
/t
/t
2
2
Case
Case
qJC
qJC
+ T
+ T
0.06231
0.10246
0.57713
0.67147
0.02659
0.25813
0.38693
R
R
0.2121
0.1057
0.1057
C
C
i
i
(°C/W)
(°C/W)
100
100
1.76E−4
1.48E−4
1.0E−4
0.002
t
t
0.002
0.03
i
i
2.0
2.0
0.1
0.1
(sec)
(sec)
1000
1000