IXXH60N65C4 Ixys, IXXH60N65C4 Datasheet - Page 4

• Manufacturer Part Number: IXXH60N65C4
• Description: IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH60N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 118 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
0.01
100
0.1
10
35
30
25
20
15
10
0.00001
5
0
1
0
0
f
= 1 MHz
10
5
20
10
30
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
40
I
V
C
CE
- Amperes
20
- Volts
50
60
25
C ies
C oes
C res
70
Fig. 11. Maximum Transient Thermal Impedance
0.001
T
J
30
= - 40ºC
80
25ºC
150ºC
35
90
Pulse Width - Seconds
100
40
0.01
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
J
CE
G
10
= 60A
= 10mA
= 150ºC
= 5
= 325V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
20
0.1
30
300
Fig. 8. Gate Charge
Q
G
40
- NanoCoulombs
V
CE
400
50
- Volts
IXXH60N65C4
60
1
500
70
80
600
90
700
100
10