NGTB15N60EG ON Semiconductor, NGTB15N60EG Datasheet - Page 5

• Manufacturer Part Number: NGTB15N60EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTB15N60EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

1.2
0.8
0.6
0.4
0.2
35
30
25
20
15
10
5
0
1
0
3
2
1
0
0
0
8
V
V
T
Rg = 22 W
Figure 9. Switching Loss vs. Temperature
CE
GE
J
Figure 7. Diode Forward Characteristics
20
= 150°C
= 400 V
= 15 V
12
Figure 11. Switching Loss vs. I
T
0.5
J
, JUNCTION TEMPERATURE (°C)
I
40
C
V
, COLLECTOR CURRENT (A)
F
, FORWARD VOLTAGE (V)
16
E
60
off
1
80
20
25°C
1.5
100
−40°C
E
on
24
E
120
TYPICAL CHARACTERISTICS
V
V
I
Rg = 22 W
on
150°C
C
CE
GE
E
= 15 A
off
2
= 400 V
= 15 V
C
28
140
http://onsemi.com
160
2.5
32
5
1000
1000
100
100
10
10
20
15
10
1
1
5
0
0
8
0
V
V
T
Rg = 22 W
I
Figure 10. Switching Time vs. Temperature
C
CE
GE
J
t
20
t
d(off)
d(on)
= 15 A
= 150°C
t
t
= 400 V
r
= 15 V
f
12
Figure 12. Switching Time vs. I
T
20
40
Figure 8. Typical Gate Charge
J
, JUNCTION TEMPERATURE (°C)
I
C
, COLLECTOR CURRENT (A)
Q
60
G
16
, GATE CHARGE (nC)
80
40
V
CES
100 120
20
= 120 V
60
24
140 160
V
CES
V
V
I
Rg = 22 W
C
CE
GE
= 15 A
80
= 480 V
t
= 400 V
= 15 V
C
d(on)
28
t
d(off)
t
f
t
180
r
100
200
32