IXXK160N65B4 Ixys, IXXK160N65B4 Datasheet - Page 4

• Manufacturer Part Number: IXXK160N65B4
• Description: IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK160N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.54 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 310 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 160 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
120
100
100
0.001
80
60
40
20
0.01
0
0.3
0.1
0.00001
0
1
0
f
= 1 MHz
20
5
40
10
60
Fig. 7. Transconductance
Fig. 9. Capacitance
0.0001
15
80
I
V
C
CE
100
- Amperes
20
- Volts
120
25
T
J
140
= - 40ºC
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
0.001
25ºC
150ºC
30
160
180
35
200
Pulse Width - Seconds
40
0.01
aaaa
350
300
250
200
150
100
16
14
12
10
50
8
6
4
2
0
0
100
0
V
I
I
C
G
CE
T
R
dv / dt < 10V / ns
= 160A
= 10mA
50
J
G
= 325V
= 150ºC
= 1
Fig. 10. Reverse-Bias Safe Operating Area
200
Ω
100
0.1
150
300
Fig. 8. Gate Charge
Q
G
- NanoCoulombs
200
V
CE
400
- Volts
250
IXXK160N65B4
IXXX160N65B4
1
300
500
350
600
400
450
700
10