IXXR110N65B4H1 Ixys

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IXXR110N65B4H1

Manufacturer Part Number

IXXR110N65B4H1

Description

IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT

Manufacturer

Ixys

Specifications of IXXR110N65B4H1

Rohs

yes

Configuration

Single

Collector- Emitter Voltage Vceo Max

650 V

Collector-emitter Saturation Voltage

1.75 V

Maximum Gate Emitter Voltage

20 V

Continuous Collector Current At 25 C

150 A

Gate-emitter Leakage Current

100 nA

Power Dissipation

455 W

Maximum Operating Temperature

+ 175 C

Package / Case

ISOPLUS 247-3

Continuous Collector Current Ic Max

70 A

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

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