IXXN110N65B4H1 Ixys, IXXN110N65B4H1 Datasheet
IXXN110N65B4H1
Specifications of IXXN110N65B4H1
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IXXN110N65B4H1 Summary of contents
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... CES CE CES GE = ±20V 0V, V GES 110A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXN110N65B4H1 TM Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 215 200 110 70 730 = 2Ω 220 G CM ≤ CES = 150° ...
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... Characteristic Values Min. Typ. 1 150°C 1 150° 300V 100 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXN110N65B4H1 SOT-227B miniBLOC (IXXN) Max 1. 0.20 °C/W °C/W Max. 2 ...
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... T = 25º 220A 110A 20 10 55A IXXN110N65B4H1 Fig. 2. Extended Output Characteristics @ 15V 13V GE 14V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 220A ...
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... C ies 160 120 C oes res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXXN110N65B4H1 Fig. 8. Gate Charge V = 325V 110A 10mA 100 120 140 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...
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... CE 120 150 100 T = 150ºC 140 J 80 130 60 120 40 110 100 100 105 110 IXXN110N65B4H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω , 15V 400V 150º 25ºC ...
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... I = 55A 100 125 150 IXXN110N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º Amperes ...
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... 200A F 0.1 100A 0.01 50A 0.001 1200 1400 1600 IXXN110N65B4H1 Fig. 22. Typ. Reverse Recovery Charge 150º 300V 1000 1200 1400 1600 - [A/µs] F Fig. 24. Typ. Recovery Time t 1000 1200 1400 ...