NGTB20N120IHLWG ON Semiconductor, NGTB20N120IHLWG Datasheet - Page 3
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NGTB20N120IHLWG
Manufacturer Part Number
NGTB20N120IHLWG
Description
IGBT Transistors
Manufacturer
ON Semiconductor
Datasheet
1.NGTB20N120IHLWG.pdf
(9 pages)
Specifications of NGTB20N120IHLWG
Rohs
yes
Collector- Emitter Voltage Vceo Max
1200 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
40 A
Power Dissipation
250 W
Package / Case
TO-247
Mounting Style
Through Hole
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGTB20N120IHLWG
Manufacturer:
ON/安森美
Quantity:
20 000
10,000
1000
120
100
120
100
100
80
60
40
20
80
60
40
20
10
0
0
0
0
0
T
J
T
= −40°C
J
25
V
V
V
= 25°C
CE
CE
CE
Figure 1. Output Characteristics
Figure 3. Output Characteristics
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
1
1
Figure 5. Typical Capacitance
50
V
GE
= 20 to 13 V
75
2
2
100
V
GE
C
C
C
oes
res
ies
= 20 to 13 V
3
3
125
11 V
10 V
TYPICAL CHARACTERISTICS
150
9 V
11 V
8 V
4
4
175
10 V
http://onsemi.com
9 V
8 V
7 V
7 V
200
5
5
3
120
100
120
100
120
100
80
60
40
20
80
60
40
20
80
60
40
20
0
0
0
0
0
0
T
Figure 4. Typical Transfer Characteristics
J
Figure 6. Diode Forward Characteristics
= 150°C
V
CE
0.5
Figure 2. Output Characteristics
V
, COLLECTOR−EMITTER VOLTAGE (V)
1
GE
V
, GATE−EMITTER VOLTAGE (V)
F
, FORWARD VOLTAGE (V)
1.0
5
T
J
2
= 150°C
T
J
1.5
= 25°C
T
3
J
= 25°C
2.0
10
V
GE
T
= 20 to 11 V
J
= 125°C
4
2.5
9 V
8 V
7 V
10 V
3.0
15
5