TIG065E8-TL-H ON Semiconductor, TIG065E8-TL-H Datasheet

no-image

TIG065E8-TL-H

Manufacturer Part Number
TIG065E8-TL-H
Description
IGBT Transistors HIGH POWER SWITCHING
Manufacturer
ON Semiconductor
Datasheet

Specifications of TIG065E8-TL-H

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TIG065E8-TL-H
Manufacturer:
ON
Quantity:
94 200
Ordering number : ENA1862A
TIG065E8
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
Halogen free compliance
1
8
Parameter
0.65
Bot t om View
Top View
2.9
5
4
0.3
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : ECH8
0.15
V CES
V GES
V GES
I CP
dv / dt
Tch
Tstg
TIG065E8-TL-H
Symbol
0 t o 0.02
N-Channel IGBT
Light-Controlling Flash Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤1ms
V GE =2.5V, C M =100μF
V CE ≤320V, starting Tch=25°C
2
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3000 pcs./reel
Packing Type: TL
Electrical Connection
Low voltage drive (2.5V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Conditions
8
1
60612 TKIM/N2410PJ TKIM TC-00002514
TL
7
2
6
3
DATA SHEET
5
4
: ECH8
: -
Marking
Ratings
LOT No.
ZE
-40 to +150
400
150
400
150
±4
±5
No. A1862-1/8
V / μs
Unit
°C
°C
A
V
V
V

Related parts for TIG065E8-TL-H

TIG065E8-TL-H Summary of contents

Page 1

... V GE =2.5V =100μ ≤320V, starting Tch=25°C Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3000 pcs./reel TIG065E8-TL-H Packing Type 0.02 Electrical Connection 8 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings ...

Page 2

... Reverse Transfer Capacitance Fig.1 Large Current R Load Switching Circuit V GE Note1. The collector voltage gradient must be smaller than 400V / μs to protect the device of gate-series resistance R G when it is turned off. Ordering Information Device TIG065E8-TL 150 Tc=25 ° C 125 100 75 ...

Page 3

... Case Temperature ° Time -- I CP 10000 Switching test circuit Fig 1000 100 100 Collector Current (Pulse TIG065E8 10 Tc= --25 ° 3.5 4.0 4.5 5.0 0 IT16026 10 Tc=75 ° ...

Page 4

... Collector Current (Pulse Turn OFF I C 500 400 300 200 100 100 Turn OFF Collector Current, Turn OFF TIG065E8 180 V CE =320V C M =100μ =2.5V 160 V CC =320V 140 I CP =150A 120 100 ...

Page 5

... Δ t= Δ /100ns Overall waveform V Turn off Defi nition of Switching Time :10 (on TIG065E8 Enlarged picture of turn-off period Turn-off period Turn off :90 :90 :10 (off) Δt=100ns Δ ...

Page 6

... Embossed Taping Specifi cation TIG065E8-TL-H TIG065E8 No. A1862-6/8 ...

Page 7

... Outline Drawing TIG065E8-TL-H TIG065E8 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No. A1862-7/8 ...

Page 8

... Note : TIG065E8 has protection diode between gate and emitter but handling it requires suffi cient care to be taken. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords